Imec has demonstrated for the first time fully functional integrated forksheet FETs, with short-channel control (SSSAT=66-68mV/dec) comparable to GAA nanosheet devices down to 22nm gate length.
www.electronicsweekly.com, Jun. 17, 2021 –
Dual work function metal gates are integrated at 17nm spacing between n- and pFETs, highlighting the key benefit of forksheet devices for advanced CMOS area scaling.
The forksheet device has recently been proposed by imec as the most promising device architecture to extend the GAA nanosheet device generation with additional scaling and performance beyond 2nm technology node.
Unlike nanosheet devices, the sheets are now controlled by a tri-gate forked structure – realized by introducing a dielectric wall in between the p- and nMOS devices before gate patterning.