CEA-Leti papers at IEDM 2023, Dec. 9-13, in San Francisco, will present results in multiple fields, including ultimate 3D advances in radio frequency, such as performance improvement at cryogenic temperature.
timestech.in/, Nov. 13, 2023 –
The institute will present nine papers during the conference this year. Two presentations will highlight a breakthrough in 3D sequential integration and results pushing GaN/Si HEMT closer to GaN/SiC performance at 28 GHz:
- "3D Sequential Integration with Si CMOS Stacked on 28nm Industrial FDSOI with Cu-ULK iBEOL Featuring RO and HDR Pixel", reports the world-first 3D sequential integration of CMOS over CMOS with advanced metal line levels, which brings 3DSI with intermediate BEOL closer to commercialization.
- "6.6W/mm 200mm CMOS Compatible AlN/GaN/Si MIS-HEMT with In-Situ SiN Gate Dielectric and Low Temperature Ohmic Contacts" reports development of CMOS compatible 200mm SiN/AlN/GaN MIS-HEMT on silicon substrate that brings GaN/Si high electron mobility transistors (HEMT) closer to GaN/SiC performance at 28 GHz in power density. It also highlights that SiN/AlN/GaN on silicon metal-insulated semiconductor (MIS-HEMT) is a potential candidate for high power Ka-band power amplifiers.
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