Samsung's CXL memory packs 4x the capacity over the previous version, enabling a server to scale to tens of terabytes with only one-fifth of the system latency.
www.eetasia.com, May. 11, 2022 –
Samsung Electronics Co. Ltd has developed the industry's first 512GB Compute Express Link (CXL) DRAM, taking an important step toward the commercialization of CXL which will enable extremely high memory capacity with low latency in IT systems.
Since introducing the industry's first CXL DRAM prototype with a field-programmable gate array (FPGA) controller in May 2021, Samsung has been working closely with data center, enterprise server and chipset companies to develop an improved, customizable CXL device.
The new CXL DRAM is built with an application-specific integrated circuit (ASIC) CXL controller and is the first to pack 512GB of DDR5 DRAM, featuring four times the memory capacity and one-fifth the system latency over the previous Samsung CXL offering.
"CXL DRAM will become a critical turning point for future computing structures by substantially advancing artificial intelligence (AI) and big data services, as we aggressively expand its usage in next-generation memory architectures including software-defined memory (SDM)," said Cheolmin Park, vice president of Memory Global Sales & Marketing at Samsung Electronics, and Director of the CXL Consortium. "Samsung will continue to collaborate across the industry to develop and standardize CXL memory solutions, while fostering an increasingly solid ecosystem."